Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET's

• The soft gate-oxide breakdown event is observed to have negligible impact on the intrinsic parameters of even a narrow nFET. However, during subsequent wear-out of the breakdown path a significant impact of gate-to-channel breakdowns on nFET characteristics is found. It is also shown that i) the effect of voltage stress on gate oxide and ii) apparent electrical effects have to be corrected for to properly understand the intrinsic nature of the breakdown.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

CMOS integrated circuits

Computer simulation

Electric resistance

Extrapolation

Leakage currents

Parameter estimation

Threshold voltage

Transconductance

Circuit simulations

Gate-oxides

Oxide wear-out

Voltage stress

MOSFET devices

Publication and Content Type

ref (subject category)

kon (subject category)