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- Kaczer, B. (author)
Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET's
- Article/chapterEnglish2004
Publisher, publication year, extent ...
- 2004
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-157429
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-157429URI
Supplementary language notes
- Language:English
- Summary in:English
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- SwePubSwePub
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Notes
- QC 20141212
- The soft gate-oxide breakdown event is observed to have negligible impact on the intrinsic parameters of even a narrow nFET. However, during subsequent wear-out of the breakdown path a significant impact of gate-to-channel breakdowns on nFET characteristics is found. It is also shown that i) the effect of voltage stress on gate oxide and ii) apparent electrical effects have to be corrected for to properly understand the intrinsic nature of the breakdown.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- CMOS integrated circuits
- Computer simulation
- Electric resistance
- Extrapolation
- Leakage currents
- Parameter estimation
- Threshold voltage
- Transconductance
- Circuit simulations
- Gate-oxides
- Oxide wear-out
- Voltage stress
- MOSFET devices
Added entries (persons, corporate bodies, meetings, titles ...)
- De Keersgieter, A. (author)
- Mahmood, SalmanIMEC, Belgium(Swepub:kth)u17isu3m (author)
- Degraeve, R. (author)
- Groeseneken, G. (author)
- IMEC, Belgium (creator_code:org_t)
Related titles
- In:Annu Proc Reliab Phys Symp, s. 79-83
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