Strong broad C-band room-temperature photoluminescence in amorphous Er2O3 film

• Photoluminescence with the bandwidth of 45 nm (1523-1568 nm at the level of 3 dB) was observed in amorphous Er2O3 films grown on quartz substrate by pulsed laser ablation of erbium oxide stoichiometric target. Optical transmission spectrum has been fitted to Swanepoel formula [J. Phys. E 16, 1214 (1983)] to determine dispersion of refractive index and to extract resonance absorption peaks at 980 and 1535 nm. The maximum gain coefficient as high as 800 dB/cm at 1535 nm was estimated using McCumber theory and experimental spectrum of the resonance absorption. For 5 mm long waveguide amplifier with erbium doping confinement factor of 0.1, the theory predicts the spectral gain of 18 dB with 1.2 dB peak-to-peak flatness in the bandwidth of 31 nm (1532-1563 nm) when 73% of Er3+ ions are excited from the ground state to the I-4(3/2) laser level. Strong broadband photoluminescence at room temperature and inherently flat spectral gain promise Er2O3 films for ultrashort high-gain optical waveguide amplifiers and integrated light circuits.

Keyword

laser-ablation

silicon

si

luminescence

excitation

gain

Publication and Content Type

ref (subject category)

art (subject category)