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Control of self-hea...
Control of self-heating in thin virtual substrate strained Si MOSFETs
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Olsen, Sarah H. (author)
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Escobedo-Cousin, Enrique (author)
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Varzgar, John B. (author)
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Agaiby, Rimoon (author)
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Seger, Johan (author)
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Dobrosz, Peter (author)
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Chattopadhyay, Sanatan (author)
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Bull, Steve J. (author)
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O'Neill, Anthony G. (author)
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- Hellström, Per-Erik (author)
- KTH,Integrerade komponenter och kretsar
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Edholm, Jonas (author)
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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Lyutovich, Klara L. (author)
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Oehme, Michael (author)
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Kasper, Erich (author)
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2006
- 2006
- English.
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In: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9383 .- 1557-9646. ; 53:9, s. 2296-2305
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- This paper presents the first results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in electrical performance are demonstrated compared with Si control devices. The impact of SiGe device self-heating is compared for strained Si MOSFETs fabricated on thin and thick virtual substrates. This paper demonstrates that by using high-quality thin virtual substrates,,the compromised performance enhancements commonly observed in short-gate-length MOSFETs and high-bias conditions due to self-heating in conventional thick virtual substrate devices are eradicated. The devices were fabricated with a 2.8-nm gate oxide and included NiSi to reduce the parasitic series resistance. The strained layers grown on the novel substrates comprising 20% Ge did not relax during fabrication. Good ON-state performance, OFF-state performance, and cross-wafer uniformity are demonstrated. The results show that thin virtual substrates have the potential to circumvent the major issues associated with conventional virtual substrate technology. A promising solution for realizing high-performance strained Si devices suitable for a wide range of applications is thus presented.
Keyword
- MOSFETs
- self-heating
- silicon germanium
- strained silicon
- virtual substrate
- field-effect transistors
- n-channel mosfets
- high ge content
- buffer layers
- fabrication
- silicon
- relaxation
- mobility
- quality
- alloys
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Olsen, Sarah H.
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Escobedo-Cousin, ...
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Varzgar, John B.
-
Agaiby, Rimoon
-
Seger, Johan
-
Dobrosz, Peter
-
show more...
-
Chattopadhyay, S ...
-
Bull, Steve J.
-
O'Neill, Anthony ...
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Hellström, Per-E ...
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Edholm, Jonas
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Östling, Mikael
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Lyutovich, Klara ...
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Oehme, Michael
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Kasper, Erich
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show less...
- Articles in the publication
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IEEE Transaction ...
- By the university
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Royal Institute of Technology