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Deep defect centers in silicon carbide monitored with deep level transient spectroscopy

Dalibor, T (author)
Pensl, G (author)
Matsunami, H (author)
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Kimoto, T (author)
Choyke, W J (author)
Schoner, A (author)
Nordell, N (author)
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1997
1997
English.
In: Physica status solidi. A, Applied research. - 0031-8965 .- 1521-396X. ; 162:1, s. 199-225
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