Search: onr:"swepub:oai:DiVA.org:kth-16214" >
Photoacoustic spect...
Abstract
Subject headings
Close
- The optical transitions in a range of 1.5-5.2 eV of n-type 4H-SiC have been investigated experimentally by photoacoustic spectroscopy and theoretically by a full-potential linearized augmented plane wave method. From the absorption spectrum, we found the indirect optical bandgap at 3.2 eV and the direct transitions around 4.5 eV in very good agreement with what has been predicted by theoretical calculations.
Keyword
- silicon carbide
- photoacoustic spectroscopy
- hexagonal sic polytypes
- absorption-bands
- 4h
- states
- wave
- cr
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database