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Scanning spreading resistance microscopy of shallow doping profiles in silicon
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- Suchodolskis, Arturas (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Hallén, Anders. (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
- Gran, J. (author)
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- Hansen, T. E. (author)
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- (creator_code:org_t)
- Elsevier BV, 2006
- 2006
- English.
- In: Nuclear Instruments and Methods in Physics Research Section B. - : Elsevier BV. - 0168-583X .- 1872-9584. ; 253:02-jan, s. 141-144
- Journal article (peer-reviewed)
Abstract
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- We demonstrate the application of scanning spreading resistance microscopy (SSRM) for characterization of shallow highly-conductive layers formed by boron implantation of lowly doped n-type silicon substrate followed by a post-implantation annealing. The electrically active dopant concentration versus depth was obtained from a cross-section of freshly cleaved samples where the Si-surface could be clearly distinguished by depositing a SiO2-layer before cleavage. To quantify free carrier concentration we calibrated our data against samples with implanted/annealed boron profiles established by secondary ion mass spectrometry (SIMS). A good fit of SSRM and SIMS data is possible for free carrier concentrations lower than 10(20) cm(-3), but for higher concentrations there is a discrepancy indicating an incomplete activation of the boron.
Subject headings
- NATURVETENSKAP -- Data- och informationsvetenskap (hsv//swe)
- NATURAL SCIENCES -- Computer and Information Sciences (hsv//eng)
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- Royal Institute of Technology
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