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SiC power devices in a soft switching converter including aspects on packaging

Ranstad, P. (author)
Alstom Power, Sweden
Giezendanner, F. (author)
Alstom Power, Sweden
Bakowski, Mietek (author)
RISE,Acreo
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Lim, Jang-Kwon (author)
RISE,Acreo
Tolstoy, Georg (author)
KTH,Elektrisk energiomvandling,KTH Royal Institute of Technology, Sweden
Ranstad, A. (author)
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 (creator_code:org_t)
The Electrochemical Society, 2014
2014
English.
In: ECS Transactions. - : The Electrochemical Society. - 1938-6737 .- 1938-5862. ; , s. 51-59
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • In many applications of power electronic converters efficiency and size are important figures of merit. Low losses in the power semiconductors as well as high frequency operation are important factors to obtain compact and highly efficient converters. The converters considered in this paper are off-line industrial power supplies (~100 kW) operating at a switching frequency range of 20-40 kHz. Replacing Si power devices by SiC counterparts enables both lower losses and increased switching frequencies. In this paper, experimental results from SiC PiN diodes, (output rectifiers) and SiC MOSFETs, (active switches) are presented.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Maskinteknik -- Energiteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Mechanical Engineering -- Energy Engineering (hsv//eng)

Keyword

Gallium nitride
MOSFET devices
Nitrides
Power converters
Power electronics
Rectifying circuits
Semiconductor diodes
Silicon
Soft switching
Switching circuits
Switching frequency
Active switches
Figures of merits
High frequency operation
Industrial power supplies
Power electronic converters
Power semiconductors
SiC PiN diodes
Softswitching converters
Silicon carbide

Publication and Content Type

ref (subject category)
kon (subject category)

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