Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor

• The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Devices

electrical properties

neutron irradiation

Electric properties

Irradiation

Isotopes

Neutron sources

Neutrons

Nuclear reactors

Semiconductor junctions

Silicon

Silicon carbide

Detector response

Device detectors

Irradiation test

Neutron converters

Reverse voltage bias

Thermal neutrons

Thermal-neutron detection

Publication and Content Type

ref (subject category)

kon (subject category)