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Temperature depende...
Temperature dependencies of free-carrier-absorption lifetime in fluorescent 6H-SiC layers
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- Manolis, G. (author)
- Institute of Applied Research, Vilnius University, Lithuania
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- Gulbinas, K. (author)
- Institute of Applied Research, Vilnius University, Lithuania
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- Grivickas, V. (author)
- Institute of Applied Research, Vilnius University, Lithuania
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- Jokubavicius, Valdas (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Linnarsson, Margareta (author)
- KTH,Integrerade komponenter och kretsar,Royal Institute of Technology, Kista, Sweden
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Institute of Physics Publishing (IOPP), 2014
- 2014
- English.
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In: IOP Conference Series. - : Institute of Physics Publishing (IOPP). ; 56:1, s. 012006-
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Abstract
Subject headings
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- The nonradiative decay of majority electrons has been studied over a wide temperature range from 80 K to 600 K using the time-resolved free-carrier-absorption (FCA) technique. At high injection level of the highly-luminescent N-B codoped 6H-SiC epilayer, we revealed three main relaxation components of injected free electrons over ps-to-ms time ranges. By means of temperature dependency, two components can be ascribed to thermal activation of holes from a shallow (200 meV) and a deep (500 meV) acceptor. The third one, which has a hundred us-time scale, we attribute to minority hole recombination from the valance band into the electron trap (53 meV). This recombination channel seems to compete with the deep-acceptor (Boron) to-donor (Nitrogen) pair visible emission at and below 300 K.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Energy gap
- Light emission
- Semiconductor junctions
- Solar cells
- High injection
- Hole recombination
- Nonradiative decays
- Recombination channels
- Temperature dependencies
- Thermal activation
- Visible emissions
- Wide temperature ranges
- Silicon carbide
Publication and Content Type
- ref (subject category)
- kon (subject category)
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