Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions

Miller, Casey W. (author)

Li, Zhi-Pan (author)

Schuller, Ivan K. (author)

Dave, R. W. (author)

Slaughter, J. M. (author)

(creator_code:org_t)

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schrodinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.

By the author/editor: Miller, Casey W.; Li, Zhi-Pan; Schuller, Ivan K ...; Dave, R. W.; Slaughter, J. M.; Åkerman, Johan

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