Linear optical response of zinc-blende and wurtzite III-N (III = B, Al, Ga, and In)

• We present calculated dielectric function epsilon(omega) and linear optical absorption alpha(omega) of the cubic and hexagonal structures of BN, AIN, GaN, and InN, employing an all-electron linearized augmented plane wave method within the local density approximation (LDA) plus quasi-particle (QP) correction. We show that this LDA+QP approach yields accurate high-frequency dielectric constant Moreover, by employing a modelled electron-optical phonon interaction we calculate the static dielectric function epsilon(0).

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Keyword

nitrides

semiconducting materials

computer simulation

crystal structure

semiconductors

approximation

Publication and Content Type

ref (subject category)

art (subject category)