Search: onr:"swepub:oai:DiVA.org:kth-170308" >
Optical and structu...
Optical and structural properties of sulfur-doped ELOG InP on Si
-
- Sun, Yanting (author)
- KTH,Material- och nanofysik
-
- Junesand, Carl (author)
- KTH,Material- och nanofysik,KTH Royal Institute Technology, Sweden
-
- Metaferia, Wondwosen (author)
- KTH,Material- och nanofysik,KTH Royal Institute Technology, Sweden
-
show more...
-
- Kataria, Himanshu (author)
- KTH,Material- och nanofysik,KTH Royal Institute Technology, Sweden
-
- Julian, N. (author)
- University of Calif Santa Barbara, CA 93106 USA
-
- Bowers, J. (author)
- University of Calif Santa Barbara, CA 93106 USA
-
- Pozina, Galia (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
-
- Hultman, Lars (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
-
- Lourdudoss, Sebastian (author)
- KTH,Halvledarmaterial, HMA,KTH Royal Institute Technology, Sweden
-
- Sun, Yan-Ting (author)
- KTH Royal Institute Technology, Sweden
-
show less...
-
(creator_code:org_t)
- AIP Publishing, 2015
- 2015
- English.
-
In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 117:21
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
show less...
Abstract
Subject headings
Close
- Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO2 mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.
Subject headings
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Luminescence
- Structural properties
- Sulfur
- Transmission electron microscopy
- Cross-sectional transmission electron microscopy
- Diffraction conditions
- Enhanced luminescence
- Epitaxial lateral overgrowth
- Fault propagation
- Luminescence intensity
- Room temperature
- Situ thermal annealing
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database
- By the author/editor
-
Sun, Yanting
-
Junesand, Carl
-
Metaferia, Wondw ...
-
Kataria, Himansh ...
-
Julian, N.
-
Bowers, J.
-
show more...
-
Pozina, Galia
-
Hultman, Lars
-
Lourdudoss, Seba ...
-
Sun, Yan-Ting
-
show less...
- About the subject
-
- NATURAL SCIENCES
-
NATURAL SCIENCES
-
and Physical Science ...
-
and Other Physics To ...
-
- NATURAL SCIENCES
-
NATURAL SCIENCES
-
and Physical Science ...
- Articles in the publication
-
Journal of Appli ...
- By the university
-
Royal Institute of Technology
-
Linköping University