Photoelectrical characteristics of a C/CNx multiwalled nanotube

Xiao, Kai (author)

Liu, Yunqi (author)

Yu, Gui (author)

Zhai, Jin (author)

Jiang, Lei (author)

Hu, Wenping (author)

Shuai, Zhigang (author)

Zhu, Daoben (author)

(creator_code:org_t)

Wiley, 2007
2007
English.
In: Advanced Functional Materials. - : Wiley. - 1616-301X .- 1616-3028. ; 17:15, s. 2842-2846

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

A nanotube diode fabricated from a single C/CNx multiwalled nanotube exhibits a large photocurrent and a large photovoltage under illumination. The current-voltage (I-V) characteristics of the diode indicate a clear rectification effect. By comparing the I-V characteristics of C, CNx, and C/CNx nanotube diodes, we show that the rectifying characteristics of the C/CNx diode arises from the molecular junction formed at the C/CNx interface where the C and CNx segments are chemically bonded. External radiation photochernically generates electrons and holes in the C/CNx nanotube, producing a large photocurrent because of the influence of the strong electric field in the vicinity of the C/CNx junction. These unique photoresponsive characteristics of C/CNx, nanotube junction diodes points to potential applications such as photovoltaic devices and photodiodes.

By the author/editor: Xiao, Kai; Fu, Ying; Liu, Yunqi; Yu, Gui; Zhai, Jin; Jiang, Lei; show more...; Hu, Wenping; Shuai, Zhigang; Luo, Yi; Zhu, Daoben; show less...

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