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- Xiao, Kai (author)
Photoelectrical characteristics of a C/CNx multiwalled nanotube
- Article/chapterEnglish2007
Publisher, publication year, extent ...
- Wiley,2007
- printrdacarrier
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- LIBRIS-ID:oai:DiVA.org:kth-17078
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-17078URI
- https://doi.org/10.1002/adfm.200600830DOI
Supplementary language notes
- Language:English
- Summary in:English
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- SwePubSwePub
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- QC 20100525
- A nanotube diode fabricated from a single C/CNx multiwalled nanotube exhibits a large photocurrent and a large photovoltage under illumination. The current-voltage (I-V) characteristics of the diode indicate a clear rectification effect. By comparing the I-V characteristics of C, CNx, and C/CNx nanotube diodes, we show that the rectifying characteristics of the C/CNx diode arises from the molecular junction formed at the C/CNx interface where the C and CNx segments are chemically bonded. External radiation photochernically generates electrons and holes in the C/CNx nanotube, producing a large photocurrent because of the influence of the strong electric field in the vicinity of the C/CNx junction. These unique photoresponsive characteristics of C/CNx, nanotube junction diodes points to potential applications such as photovoltaic devices and photodiodes.
Subject headings and genre
- field-effect transistors
- carbon nanotube
- intramolecular junctions
- logic gates
- photoconductivity
- optoelectronics
- rectification
- cnx/c
Added entries (persons, corporate bodies, meetings, titles ...)
- Fu, YingKTH,Teoretisk kemi(Swepub:kth)u1wnf4xe (author)
- Liu, Yunqi (author)
- Yu, Gui (author)
- Zhai, Jin (author)
- Jiang, Lei (author)
- Hu, Wenping (author)
- Shuai, Zhigang (author)
- Luo, YiKTH,Teoretisk kemi(Swepub:kth)u126eitw (author)
- Zhu, Daoben (author)
- KTHTeoretisk kemi (creator_code:org_t)
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- In:Advanced Functional Materials: Wiley17:15, s. 2842-28461616-301X1616-3028
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