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Effect of tunable d...
Effect of tunable dot charging on photoresponse spectra of GaAs p-i-n diode with InAs quantum dots
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- Shang, Xiangjun (author)
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
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- Yu, Ying (author)
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
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- Li, Mifeng (author)
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
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- Wang, Lijuan (author)
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
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- Zha, Guowei (author)
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
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- Ni, Haiqiao (author)
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
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- Pettersson, Håkan, 1962- (author)
- Halmstad University,Lund University,Lunds universitet,Högskolan i Halmstad,Tillämpad matematik och fysik (MPE-lab),Nanovetenskap,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Fu, Ying (author)
- KTH,Cellens fysik,Science for Life Laboratory, SciLifeLab,Science for Life Laboratory, Department of Applied Physics, Royal Institute of Technology, Stockholm, Sweden
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- Niu, Zhichuan (author)
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
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(creator_code:org_t)
- Melville, NY : American Institute of Physics (AIP), 2015
- 2015
- English.
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In: Journal of Applied Physics. - Melville, NY : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 118:24
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Abstract
Subject headings
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- Quantum dot (QD)-embedded photodiodes have demonstrated great potential for use as detectors. A modulation of QD charging opens intriguing possibilities for adaptive sensing with bias-tunable detector characteristics. Here, we report on a p-i-n GaAs photodiode with InAs QDs whose charging is tunable due to unintentional Be diffusion and trap-assisted tunneling of holes, from bias-and temperature (T)-dependent photocurrent spectroscopy. For the sub-bandgap spectra, the T-dependent relative intensities "QD-s/WL" and "WL/GaAs" (WL: wetting layer) indicate dominant tunneling under -0.9V (trap-assisted tunneling from the top QDs) and dominant thermal escape under -0.2 similar to 0.5V (from the bottom QDs since the top ones are charged and inactive for optical absorption) from the QD s-state, dominant tunneling from WL, and enhanced QD charging at >190K (related to trap level ionization). For the above-bandgap spectra, the degradation of the spectral profile (especially near the GaAs bandedge) as the bias and T tune (especially under -0.2 similar to 0.2V and at >190 K) can be explained well by the enhanced photoelectron capture in QDs with tunable charging. The dominant spectral profile with no degradation under 0.5V is due to a saturated electron capture in charged QDs (i.e., charging neutralization). QD level simulation and schematic bandstructures can help one understand these effects.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
Keyword
- EMISSION
- WELLS
Publication and Content Type
- ref (subject category)
- art (subject category)
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