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- Jiang, JunKTH,Teoretisk kemi (author)
Ab initio study of energy band structures of GaAs nanoclusters
- Article/chapterEnglish2009
Publisher, publication year, extent ...
- AIP Publishing,2009
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-18284
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-18284URI
- https://doi.org/10.1063/1.3094914DOI
Supplementary language notes
- Language:English
- Summary in:English
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Notes
- QC 20100525
- Electronic states and optical transitions of hydrogen terminated GaAs nanoclusters up to 16.9 nm in diameter were studied using a large-scale quantum chemistry approach called central insertion scheme by which the quantum confinement effect is shown to quantitatively agree with experimental results. The ab initio study further reveals that the effective mass of the conduction-band electron (valence-band hole) in the GaAs nanocluster is larger (smaller) than the bulk material value.
Subject headings and genre
- ab initio calculations
- conduction bands
- effective mass
- gallium
- arsenide
- III-V semiconductors
- nanostructured materials
- electronic states
- laser-ablation
- quantum dots
- nanocrystals
- nanoparticles
Added entries (persons, corporate bodies, meetings, titles ...)
- Gao, BinKTH,Teoretisk kemi(Swepub:kth)u1jvwzpv (author)
- Han, TiantianKTH,Teoretisk kemi(Swepub:kth)u1hgqaq6 (author)
- Fu, YingKTH,Teoretisk kemi(Swepub:kth)u1wnf4xe (author)
- KTHTeoretisk kemi (creator_code:org_t)
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- In:Applied Physics Letters: AIP Publishing94:90003-69511077-3118
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