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Protective capping ...
Protective capping and surface passivation of III-V nanowires by atomic layer deposition
- Article/chapterEnglish2016
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American Institute of Physics (AIP),2016
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printrdacarrier
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LIBRIS-ID:oai:DiVA.org:kth-183209
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-183209URI
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https://doi.org/10.1063/1.4941063DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20160303
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Low temperature (similar to 200 degrees C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2 angstrom) film. For InP NWs, the best passivation (similar to 2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.
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Perros, Alexander
(author)
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Naureen, Shagufta
(author)
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Shahid, Naeem
(author)
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Jiang, Hua
(author)
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Kakko, Joona-Pekko
(author)
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Haggren, Tuomas
(author)
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Kauppinen, Esko
(author)
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Srinivasan, AnandKTH,Halvledarmaterial, HMA(Swepub:kth)u16fqvka
(author)
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Lipsanen, Harri
(author)
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KTHHalvledarmaterial, HMA
(creator_code:org_t)
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In:AIP Advances: American Institute of Physics (AIP)6:12158-3226
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Dhaka, Veer
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Perros, Alexande ...
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Naureen, Shaguft ...
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Shahid, Naeem
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Jiang, Hua
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Kakko, Joona-Pek ...
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Haggren, Tuomas
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Kauppinen, Esko
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Srinivasan, Anan ...
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Lipsanen, Harri
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- ENGINEERING AND TECHNOLOGY
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and Nano technology
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Royal Institute of Technology