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Relaxation-free and inertial switching in synthetic antiferromagnets subject to super-resonant excitation

Koop, Björn, 1987- (author)
KTH,Nanostrukturfysik
Descamps, Thomas (author)
KTH,Nanostrukturfysik
Korenivski, Vladislav (author)
KTH,Nanostrukturfysik
 (creator_code:org_t)
English.
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  • Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane picosecond-range magnetic field pulses. Our detailed micromagnetic simulations, supported by analytical results, yield the parameter space where inertial switching and relaxation-free switching can be achieved in the system. We furthermore discuss the advantages of dynamic switching in synthetic antiferromagnets and, specifically, their relatively low-power switching as compared to that in single ferromagnetic particles. Finally, we show how excitation of spin-waves in the system can be used to significantly reduce the post-switching spin oscillations for practical device geometries.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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Fysik
Physics

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