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Ultradeep, low-dama...
Ultradeep, low-damage dry etching of SiC
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Cho, H. (author)
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Leerungnawarat, P. (author)
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Hays, D. C. (author)
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Pearton, S. J. (author)
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Chu, S. N. G. (author)
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Strong, R. M. (author)
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- Zetterling, Carl-Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Östling, Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Ren, F. (author)
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(creator_code:org_t)
- AIP Publishing, 2000
- 2000
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 76:6, s. 739-741
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The Schottky barrier height (Phi(B)) and reverse breakdown voltage (V-B) of Au/n-SiC diodes were used to examine the effect of inductively coupled plasma SF6/O-2 discharges on the near-surface electrical properties of SiC. For low ion energies (less than or equal to 60 eV) in the discharge, there is minimal change in Phi(B) and V-B, but both parameters degrade at higher energies. Highly anisotropic features typical of through-wafer via holes were formed in SiC using an Al mask.
Keyword
- power devices
- nf3
- plasmas
Publication and Content Type
- ref (subject category)
- art (subject category)
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