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Analysis of short c...
Analysis of short circuit type II and III of high voltage SiC MOSFETs with fast current source gate drive principle
- Article/chapterEnglish2016
Publisher, publication year, extent ...
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Institute of Electrical and Electronics Engineers (IEEE),2016
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-197145
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-197145URI
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https://doi.org/10.1109/IPEMC.2016.7512839DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:kon swepub-publicationtype
Notes
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QC 20161213
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The Silicon Carbide (SiC) MOSFET is considered to be the leading candidate for future 1.7 kV and 3.3 kV switches in 2-level voltage source converters (VSC) up to 2 MW. For those converters, short circuit (SC) in the dc-link loop can occur due to a number of reasons, e.g. faulty semiconductor modules, faulty gate drivers (GDs), or electro-magnetic interference (EMI). Termination of such SCs is important in order to protect components and reduce the damage in the converter box. This paper presents a new short circuit protection scheme based on a universal current-source GD principle without dedicated hardware components. The performance of the design is evaluated for SC in the dc-link loop under load conditions, called type II and type III. Moreover, measurement results are presented using the proposed GD connected to a 1700 V 300 A SiC MOSFET tested during SC type II and III at two different dc-link stray inductances, 30 nH and 100 nH, and at two different temperatures, 25 °C and 125 °C. The conclusions are that the proposed scheme is able to terminate both SC type II and III with fast reaction time, with low energy dissipation, with a margin of about 15 times below the destructive level for dc-link voltages and load currents up to 1050 V and 300 A respectively.
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Kruse, L.
(author)
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Meier, S.
(author)
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Lofgren, A.
(author)
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Wiik, T.
(author)
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Nee, Hans-PeterKTH,Elkraftteknik(Swepub:kth)u1ycw7mc
(author)
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Sadik, Diane-PerleKTH,Elkraftteknik(Swepub:kth)u1m42c0c
(author)
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KTHElkraftteknik
(creator_code:org_t)
Related titles
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In:2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016: Institute of Electrical and Electronics Engineers (IEEE), s. 3392-33979781509012107
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