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Investigation of da...
Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen
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Wang, L. W. (author)
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Huang, J. P. (author)
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Duo, X. Z. (author)
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Song, Z. T. (author)
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Lin, C. L. (author)
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- Zetterling, Carl-Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Östling, Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- 2000-05-31
- 2000
- English.
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In: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 33:12, s. 1551-1555
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Silicon carbide is an important wide-band-gap semiconductor for high temperature, high-voltage, high-power and high-frequency devices. Electrical isolation is an important aspect for device applications. In this report, oxygen ions, 70 keV with doses ranging from 5 x 10(13) to 5 x 10(15) cm(-2), have been implanted into n-type 6H-SiC to investigate the possibility of forming a high-resistive layer. The damage behaviour and internal stress were checked by Rutherford backscattering spectroscopy and channelling, and an x-ray rocking curve, respectively. Atomic force microscope observations revealed that the surface morphology is quite sensitive to the implantation even at a dose of 1 x 10(14) cm(-2) After annealing in nitrogen at 1200 degrees C, no remarkable damage recovery could be seen if the deposit damage energy is over the critical value. Schottky structures of Au/SiC have been fabricated on the annealed samples and I-V curves of metal/SiC/InGeNi were measured at room temperature at both forward and reverse bias; the electrical isolation effect was observed at proper implantation dosages. The results indicated that there exists a dose window for electrical isolation.
Keyword
- enhanced thermal-oxidation
- ion-implantation
- silicon-carbide
- amorphization
- layers
Publication and Content Type
- ref (subject category)
- art (subject category)
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