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GaAs/AlGaAs buried ...
GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP : Fe regrowth
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Barrios, C. A. (författare)
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Messmer, E. R. (författare)
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Holmgren, M. (författare)
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visa fler...
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- Lourdudoss, Sebastian (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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visa färre...
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(creator_code:org_t)
- 2000
- 2000
- Engelska.
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Ingår i: Electrochemical and solid-state letters. - 1099-0062 .- 1944-8775. ; 3:9, s. 439-441
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- Selective regrowth of semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) by hydride vapor-phase epitaxy around Al-containing wet etched laser mesas is used for the first time to fabricate a GaAs/AlGaAs buried heterostructure laser emitting at 808 nm. The reverse and forward current-voltage characteristics measured at different temperatures up to 80 degrees C indicate no serious leakage current problems. The performance of the laser shows that the SI-GaInP: Fe burying layer fulfills its function as a current and optical confinement layer. The fabrication procedure and the laser characteristics are presented.
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- art (ämneskategori)
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