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Decreased low frequ...
Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors
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Sanden, M. (author)
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- Malm, B. Gunnar (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Grahn, J. V. (author)
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- Östling, Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- 2000
- 2000
- English.
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In: Microelectronics and reliability. - 0026-2714 .- 1872-941X. ; 40:11, s. 1863-1867
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The effect of hydrogen passivation by forming gas annealing (FGA) on the bipolar junction transistor low frequency noise was investigated. The results demonstrated a reduced 1/f noise component by a factor of five after FGA, which resulted in a reduced corner frequency. An equivalent input noise spectral density (S-IB) dependence on base current (IB) of S-IB similar to I-B(2) and on emitter area (A(E)) of S-IB similar to A(E)(-1) was observed, both before and after FGA. The interpretations of the results were (a) the 1/f noise was due to carrier number fluctuation, (b) the noise sources were homogeneously distributed over the polysilicon/monosilicon emitter interfacial oxide, and
Keyword
- junction transistors
- base current
- 1/f noise
- dopant
- vlsi
Publication and Content Type
- ref (subject category)
- art (subject category)
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