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DC field dependent properties of Na0.5K0.5NbO3/SiO2/Si structures at millimeter-wave frequencies
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- Abadei, S. (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Gevorgian, Spartak, 1948 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
- Cho, C. R. (author)
- show more...
- Andreasson, J. (author)
- Lindback, T. (author)
- Grishin, Alex (author)
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- (creator_code:org_t)
- AIP Publishing, 2001
- 2001
- English.
- In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 78:13, s. 1900-1902
- Journal article (peer-reviewed)
Abstract
Subject headings
Close
- Dielectric properties of laser-ablated 0.5-mum-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Omega cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-mum-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 mum. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- microwave devices
- capacitors
- ferroelectrics
- quality
- films
Publication and Content Type
- ref (subject category)
- art (subject category)
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- NATURAL SCIENCES
- NATURAL SCIENCES
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- Royal Institute of Technology
- Chalmers University of Technology
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