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DC field dependent ...
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Abadei, S.Chalmers tekniska högskola,Chalmers University of Technology
(author)
DC field dependent properties of Na0.5K0.5NbO3/SiO2/Si structures at millimeter-wave frequencies
- Article/chapterEnglish2001
Publisher, publication year, extent ...
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AIP Publishing,2001
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Numbers
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LIBRIS-ID:oai:DiVA.org:kth-20484
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-20484URI
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https://doi.org/10.1063/1.1353838DOI
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https://research.chalmers.se/publication/212370URI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20100525
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Dielectric properties of laser-ablated 0.5-mum-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Omega cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-mum-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 mum. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices.
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Gevorgian, Spartak,1948Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)spartak
(author)
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Cho, C. R.
(author)
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Grishin, Alexander M.KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u179x9xt
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Andreasson, J.
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Lindback, T.
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Grishin, Alex
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Chalmers tekniska högskolaMikroelektronik och informationsteknik, IMIT
(creator_code:org_t)
Related titles
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In:Applied Physics Letters: AIP Publishing78:13, s. 1900-19020003-69511077-3118
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