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  • Abadei, S.Chalmers tekniska högskola,Chalmers University of Technology (author)

DC field dependent properties of Na0.5K0.5NbO3/SiO2/Si structures at millimeter-wave frequencies

  • Article/chapterEnglish2001

Publisher, publication year, extent ...

  • AIP Publishing,2001
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-20484
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-20484URI
  • https://doi.org/10.1063/1.1353838DOI
  • https://research.chalmers.se/publication/212370URI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • QC 20100525
  • Dielectric properties of laser-ablated 0.5-mum-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Omega cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-mum-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 mum. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices.

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Added entries (persons, corporate bodies, meetings, titles ...)

  • Gevorgian, Spartak,1948Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)spartak (author)
  • Cho, C. R. (author)
  • Grishin, Alexander M.KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u179x9xt (author)
  • Andreasson, J. (author)
  • Lindback, T. (author)
  • Grishin, Alex (author)
  • Chalmers tekniska högskolaMikroelektronik och informationsteknik, IMIT (creator_code:org_t)

Related titles

  • In:Applied Physics Letters: AIP Publishing78:13, s. 1900-19020003-69511077-3118

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