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Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy
- Soderstrom, D. (author)
-
- Lourdudoss, Sebastian (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
- Wallnas, M. (author)
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- Dadgar, A. (author)
- Stenzel, O. (author)
- Bimberg, D. (author)
- Schumann, H. (author)
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- (creator_code:org_t)
- 2001
- 2001
- English.
- In: Electrochemical and solid-state letters. - 1099-0062 .- 1944-8775. ; 4:6, s. G53-G55
- Journal article (peer-reviewed)
Abstract
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- Epitaxial layers of ruthenium-doped InP grown by low-pressure hydride vapor phase epitaxy have been studied. Current voltage measurements were conducted at temperatures between 20 and 200 degreesC for samples doped with Ru in the range 1 x 10(17) to 5 X 10(17) cm(-3). In this doping range, the specific resistivity of n(+)/InP:Ru/n(+) structures accommodating electron injection is less than or equal to1 x 10(4) Ohm cm and that of p(+)/InP:Ru/p(+) structures accommodating hole injection is as high as 3 x 10(10) Ohm cm. The reason for such a huge difference in the resistivity of these structures is attributed to a low activation of deep Ru acceptors, thus rather giving rise to an n(-) layer than a semi-insulating layer, as supported by our theoretical simulation. Analysis of the Arrhenius plots constructed from the temperature-dependent I-V curves yield an average activation energy of Ru with reference to the conduction band equal to 0.44 and 0.52 eV under electron and hole injection, respectively.
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