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Doping-induced loss...
Doping-induced losses in AlAs/GaAs distributed Bragg reflectors
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Asplund, C. (author)
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Mogg, S. (author)
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Plaine, G. (author)
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Salomonsson, F. (author)
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Chitica, N. (author)
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- Hammar, Mattias (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- AIP Publishing, 2001
- 2001
- English.
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:2, s. 794-800
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We have studied n- and p-type doping-induced performance degradation of AlAs/GaAs distributed Bragg reflectors (DBRs) for applications in vertical cavity lasers (VCLs). Based on high-accuracy optical reflectance and triple-axis x-ray diffraction measurements on a variety of differently doped DBR structures grown by metalorganic vapor-phase epitaxy, a fitting procedure was employed to extract the doping-dependent optical loss. A striking observation is that the reflectance of these DBRs is much more sensitive to n- than p-type doping incorporation. While in the latter case the loss can be well accounted for by intervalence-band and free-carrier absorption, additional loss mechanisms must be considered for n-type DBRs. We relate the losses to doping-enhanced interdiffusion effects resulting in increased interface scattering. These findings should have important consequences for the design of VCLs, demonstrating the importance of reduced n-type doping concentrations and/or growth temperatures, or the application of alternative device concepts, e.g., employing intracavity contacts.
Keyword
- vertical-cavity lasers
- x-ray-diffraction
- room-temperature
- continuous-wave
- mu-m
- gaas
- superlattices
- heterostructures
- interdiffusion
- multilayers
Publication and Content Type
- ref (subject category)
- art (subject category)
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