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Dislocation-mediate...
Abstract
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- Using ac susceptibility, we determine the critical current density J(c) and the flux creep activation energy U of an a-axis-oriented HgBa2CaCu2O6+delta thin film. The critical current density at helium temperatures is found to be 4.6 x 10(4) A/cm(2), i.e., about two orders of magnitude smaller than for corresponding films with c-axis orientation. The temperature and ac field dependent activation energy is consistent with dislocation-mediated flux creep and well described by U(T,H-ac)=U-o(1-t(4))H-ac(-1/2) with t=T/T-c, T-c=120K, and U-o = 0.77 eV Oe(1/2) for temperatures T>45 K and in the field range studied. The activation energy is of the same order as that found in c-axis-oriented films. Below T = 45 K the activation energy is observed to decrease as thermally assisted quantum creep becomes increasingly important.
Keyword
- high-tc superconductors
- quantum collective creep
- flux-creep
- magnetic-relaxation
- thermodynamic parameters
- c superconductors
- single-crystals
- temperature
- dependence
- yba2cu3o7-delta
Publication and Content Type
- ref (subject category)
- art (subject category)
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