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Electrical resistiv...
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
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- Fernandez, J. R. L. (author)
- Instituto De Física, Universidade De São Paulo, CP66318, 05315-970 São Paulo, SP, Brazil
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- Araujo, C. M. (author)
- Moysés Araújo, C., Instituto De Física, Universidade Federal Da Bahia, Campus Universitário De Ondina, 40210-340 Salvador, Bahia, Brazil
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- da Silva, A. F. (author)
- Ferreira Da Silva, A., Instituto De Física, Universidade Federal Da Bahia, Campus Universitário De Ondina, 40210-340 Salvador, Bahia, Brazil
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Leite, J. R. (author)
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- Sernelius, Bo (author)
- Linköpings universitet,Tekniska högskolan,Teoretisk Fysik
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- Tabata, A. (author)
- Instituto De Física, Universidade De São Paulo, CP66318, 05315-970 São Paulo, SP, Brazil
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- Abramof, E. (author)
- Instituto Nacional De Pesquisas Espaciais (INPE-LAS), CP 515, 12201-970 Sao Jose dos Campos, SP, Brazil
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- Chitta, V. A. (author)
- Instituto De Física, Universidade De São Paulo, CP66318, 05315-970 São Paulo, SP, Brazil
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- Persson, Clas (author)
- Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden
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- Ahuja, R. (author)
- Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden
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- Pepe, I. (author)
- Instituto De Física, Universidade Federal Da Bahia, Campus Universitário De Ondina, 40210-340 Salvador, Bahia, Brazil
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- As, D. J. (author)
- Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany
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- Frey, T. (author)
- Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany
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- Schikora, D. (author)
- Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany
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- Lischka, K. (author)
- Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany
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Instituto De Física, Universidade De São Paulo, CP66318, 05315-970 São Paulo, SP, Brazil Moysés Araújo, C, Instituto De Física, Universidade Federal Da Bahia, Campus Universitário De Ondina, 40210-340 Salvador, Bahia, Brazil (creator_code:org_t)
- 2001
- 2001
- English.
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In: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 231:3, s. 420-427
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Abstract
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- The critical impurity concentration N-c of the metal-nonmetal (MNM) transition for the cubic GaN, InN and AIN systems. is calculated using the following two different criteria: vanishing of the donor binding energy and the crossing point between the energies in the metallic and insulating phases. A dielectric function model with a Lorentz-Lorenz correction is used for the insulating phase. The InN presents an order of magnitude increase in N-c as compared to the other two systems. The electrical resistivity of the Si-donor system GaN is investigated theoretically and experimentally from room temperature down to 10K. It presents a metallic character above a certain high impurity concentration identified as N-c. The samples were grown by plasma assisted molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. The model calculation is carried out from a recently proposed generalized Drude approach (GDA) presenting a very good estimation for the metallic region. The band-gap shift (BGS) of Si-doped GaN has also been investigated above the MNM transition where this shift is observed. Theoretical and experimental results have a rough agreement in a range of impurity concentration of interest.
Keyword
- characterization
- doping
- molecular beam epitaxy
- nitrides
- semiconductors
- si-p,bi
- devices
- donor
- gaas
- TECHNOLOGY
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Fernandez, J. R. ...
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Araujo, C. M.
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da Silva, A. F.
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Leite, J. R.
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Sernelius, Bo
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Tabata, A.
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show more...
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Abramof, E.
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Chitta, V. A.
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Persson, Clas
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Ahuja, R.
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Pepe, I.
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As, D. J.
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Frey, T.
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Schikora, D.
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Lischka, K.
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show less...
- Articles in the publication
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Journal of Cryst ...
- By the university
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Royal Institute of Technology
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Linköping University