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A Wafer-Scale Self-...
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Elahipanah, Hossein,1982-KTH,Elektronik,Electronics
(author)
A Wafer-Scale Self-Aligned Ni-Silicide (SALICIDE) Low-Ohmic Contact Technology on n-type 4H-SiC
- Article/chapterEnglish2017
Publisher, publication year, extent ...
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ECS,2017
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electronicrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-211302
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-211302URI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20170731
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A self-aligned nickel (Ni) silicide process for n-type Ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5×10-6 Ω·cm2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale, which saves time and cost.
Subject headings and genre
Added entries (persons, corporate bodies, meetings, titles ...)
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Asadollahi, AliKTH,Elektronik(Swepub:kth)u1vtio7s
(author)
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Ekström, MattiasKTH,Elektronik(Swepub:kth)u1l6zf9x
(author)
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Salemi, Arash,1976-KTH,Elektronik(Swepub:kth)u14aqahn
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Zetterling, Carl-MikaelKTH,Elektronik(Swepub:kth)u15o61ns
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Östling, MikaelKTH,Elektronik(Swepub:kth)u1u0kle4
(author)
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KTHElektronik
(creator_code:org_t)
Related titles
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In:ECS Journal of Solid State Science and Technology: ECS6:4, s. 197-2002162-87692162-8777
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