Search: onr:"swepub:oai:DiVA.org:kth-21260" >
Ion implantation of...
Ion implantation of silicon carbide
-
- Hallén, Anders. (author)
- KTH,Mikroelektronik och informationsteknik, IMIT,Hallén, A., Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden
-
- Janson, M. S. (author)
- Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden
-
- Kuznetsov, A. Y. (author)
- Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden
-
show more...
-
- Aberg, D. (author)
- Åberg, D., Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden
-
- Linnarsson, Margareta K (author)
- KTH,Mikroelektronik och informationsteknik, IMIT,Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden
-
- Svensson, B. G. (author)
- Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden, Physical Electronics, Department of Physics, Oslo University, P.O. Box 1048, Blindern, N 0316 Oslo, Norway
-
- Persson, Per (author)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
-
- Carlsson, Fredrik (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
-
- Storasta, Liutauras (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
- Bergman, Peder (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
Sridhara, S. G. (author)
-
- Zhang, Y. (author)
- Division of Ion Physics, Box 534, Ångström Laboratory, S-751 21 Uppsala, Sweden
-
show less...
-
(creator_code:org_t)
- 2002
- 2002
- English.
-
In: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 186, s. 186-194
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
show less...
Abstract
Subject headings
Close
- Ion implantation is an important technique for a successful implementation of commercial SiC devices. Much effort has also been devoted to optimising implantation and annealing parameters to improve the electrical device characteristics. However, there is a severe lack of understanding of the fundamental implantation process and the generation and annealing kinetics of point defects and defect complexes. Only very few of the most elementary intrinsic point defects have been unambiguously identified so far. To reach a deeper understanding of the basic mechanisms SiC samples have been implanted with a broad range of ions, energies, doses, etc., and the resulting defects and damage produced in the lattice have been studied with a multitude of characterisation techniques. In this contribution we will review some of the results generated recently and also try to indicate where more research is needed. In particular, deep level transient spectroscopy (DLTS) has been used to investigate point defects at very low doses and transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) are used for studying the damage build-up at high doses.
Keyword
- point defects
- damage
- annealing
- dose rate
- dislocation loops
- sic epitaxial layers
- induced damage
- nitrogen
- defects
- boron
- aluminum
- temperature
- diffusion
- TECHNOLOGY
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database
- By the author/editor
-
Hallén, Anders.
-
Janson, M. S.
-
Kuznetsov, A. Y.
-
Aberg, D.
-
Linnarsson, Marg ...
-
Svensson, B. G.
-
show more...
-
Persson, Per
-
Carlsson, Fredri ...
-
Storasta, Liutau ...
-
Bergman, Peder
-
Sridhara, S. G.
-
Zhang, Y.
-
show less...
- Articles in the publication
-
Nuclear Instrume ...
- By the university
-
Royal Institute of Technology
-
Linköping University