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Dose-rate influence...
Dose-rate influence on the defect production in MeV proton-implanted float-zone and epitaxial n-type silicon
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Leveque, P. (author)
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- Hallén, Anders. (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Pellegrino, P. (author)
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Svensson, B. G. (author)
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Privitera, V. (author)
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(creator_code:org_t)
- 2002
- 2002
- English.
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In: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 186, s. 375-379
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The production of stable vacancy-related point defects in proton-implanted float-zone and epitaxial silicon has been studied in the low dose range ( less than or equal to 10(10)/cm(2)) as a function of dose-rate. The well-known inverse dose-rate effect has been observed in both types of materials with a decrease in the concentration of vacancy-related defects as the dose-rate increases. The effect is less pronounced in oxygen lean epitaxial silicon. Moreover, a continuous decrease of the vacancy-related defect concentration as a function of the flux was measured while a threshold was expected according to previous studies. Both or these results can be explained by a simple calculation, taking into account the influence of the oxygen concentration as well as the influence of the diffusion coefficient of point defects on the inverse dose-rate effect.
Keyword
- silicon
- proton-implantation
- dose-rate
- DLTS
- transient spectroscopy
- electron traps
- irradiation
Publication and Content Type
- ref (subject category)
- art (subject category)
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