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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02628naa a2200361 4500 | |
| 001 | oai:DiVA.org:kth-21283 | |
| 003 | SwePub | |
| 008 | 100810s2002 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-212832 URI |
| 024 | 7 | a https://doi.org/10.1063/1.14305452 DOI |
| 040 | a (SwePub)kth | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Abadei, S.4 aut |
| 245 | 1 0 | a Low-frequency and microwave performances of laser-ablated epitaxial Na0.5K0.5NbO3 films on high-resistivity SiO2/Si substrates |
| 264 | 1 | b AIP Publishing,c 2002 |
| 338 | a print2 rdacarrier | |
| 500 | a QC 20100525 | |
| 520 | a The dielectric properties of laser-ablated 0.5-mum-thick c-axis epitaxial Na0.5K0.5NbO3 (NKN) films on high-resistivity (>7.7 kOmega cm) silicon SiO2/Si substrates are studied experimentally in the temperature interval of 30-320 K and at frequencies of 1.0 MHz-40 GHz. The films are grown by laser ablation from a stoichiometric target. For the measurements, planar 0.5-mum-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of NKN films. The slot width between the electrodes is 2.0 or 4.0 mum. At low frequencies (f<1.0 GHz), the structure performance is that of a typical metal-dielectric-semiconductor type, where two of this type of capacitor are connected back to back. At these frequencies, the large change in the capacitance (more than 10 times at 1.0 MHz), due to the applied dc field, is mainly due to the changes in depletion layer thickness at the surface of silicon. The associated losses are also large, tan delta>1. At microwave frequencies (f>10 GHz), the voltage dependence of the capacitance is given by the NKN film. More than a 13% capacitance change at 40 V dc bias and a Q factor of more than 15 are observed at 40 GHz, which make the structure useful for applications in electrically tunable millimeter-wave devices. | |
| 653 | a thin-films | |
| 653 | a capacitors | |
| 653 | a field | |
| 653 | a quality | |
| 653 | a devices | |
| 700 | 1 | a Gevorgian, S.4 aut |
| 700 | 1 | a Cho, C. R.4 aut |
| 700 | 1 | a Grishin, Alexander M.u KTH,Mikroelektronik och informationsteknik, IMIT4 aut0 (Swepub:kth)u179x9xt |
| 710 | 2 | a KTHb Mikroelektronik och informationsteknik, IMIT4 org |
| 773 | 0 | t Journal of Applied Physicsd : AIP Publishingg 91:4, s. 2267-2276q 91:4<2267-2276x 0021-8979x 1089-7550 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-21283 |
| 856 | 4 8 | u https://doi.org/10.1063/1.1430545 |
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