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Characterization of...
Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H-SiC
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Danielsson, E. (author)
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- Zetterling, Carl-Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Östling, Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Tsvetkov, D. (author)
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Dmitriev, V. A. (author)
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(creator_code:org_t)
- AIP Publishing, 2002
- 2002
- English.
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:4, s. 2372-2379
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- AlGaN/4H-SiC heterojunction diodes with varying composition of Al have been fabricated. Five different compositions were investigated, GaN, Al0.1Ga0.9N, Al0.15Ga0.85N, Al0.3Ga0.7N, and Al0.5Ga0.5N, along with a 4H-SiC homojunction diode for comparison. The turn on voltage was around 1 V, and the ideality factor between 1 and 2 for all heterojunction diodes except for the Al0.3Ga0.7N diode. This diode had an ideality factor between 2 and 3, and also showed a much lower series resistance, indicating a change in transport mechanism across the junction. A tunnel assisted recombination model was analyzed and compared to the extracted values of the GaN diode. The model agreed well with both current-voltage and capacitance-voltage measurements for this diode. This model was not applied to the other samples, since their characteristics could not be explained by a simple mechanism.
Keyword
- n-p heterojunctions
- ohmic contacts
- gan
- layers
Publication and Content Type
- ref (subject category)
- art (subject category)
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