Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum

• Investigation on residual Al, B, and N co-doping of 4H-SiC epitaxial layers is reported. The layers were produced by sublimation epitaxy in Ta growth cell environment at different growth temperatures and characterized by secondary ion mass spectrometry. The vapor interaction with Ta was considered through calculations of cohesive energies of several Si-, Al-, B-, and N-containing vapor molecules and also of diatomic Ta-X molecules. An analysis of kinetic mechanisms responsible for impurity incorporation is performed. Among residuals, B exhibits a stronger incorporation dependence on temperature and growth at lower temperatures can favor B decrease in the layers. Under the growth conditions in this study (Ta environment and presence of attendant Al and N), B incorporation is assisted by Si2C vapor molecule. Boron tends to occupy carbon sites at higher temperatures, i.e. higher growth rates.

Keyword

doping

impurities

vapor phase epitaxy

inorganic compounds

semiconducting materials

sublimation epitaxy

ta-container

crystals

TECHNOLOGY

Publication and Content Type

ref (subject category)

art (subject category)