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The Challenges of A...
The Challenges of Advanced CMOS Process from 2D to 3D
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- Radamson, Henry H. (författare)
- KTH,Skolan för informations- och kommunikationsteknik (ICT),Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China
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Zhang, Yanbo (författare)
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He, Xiaobin (författare)
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Cui, Hushan (författare)
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Li, Junjie (författare)
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Xiang, Jinjuan (författare)
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Liu, Jinbiao (författare)
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Gu, Shihai (författare)
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Wang, Guilei (författare)
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(creator_code:org_t)
- 2017-10-13
- 2017
- Engelska.
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Ingår i: Applied Sciences. - : MDPI AG. - 2076-3417. ; 7:10
- Relaterad länk:
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https://doi.org/10.3...
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https://urn.kb.se/re...
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https://doi.org/10.3...
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Abstract
Ämnesord
Stäng
- The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.
Ämnesord
- NATURVETENSKAP -- Data- och informationsvetenskap (hsv//swe)
- NATURAL SCIENCES -- Computer and Information Sciences (hsv//eng)
Nyckelord
- FinFETs
- CMOS
- device processing
- integrated circuits
Publikations- och innehållstyp
- ref (ämneskategori)
- for (ämneskategori)
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