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Reduction of the Sc...
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
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Lee, S. K. (author)
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- Zetterling, Carl-Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Östling, Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Aberg, I. (author)
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- Magnusson, Martin (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Deppert, Knut (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Wernersson, Lars-Erik (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH
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- Samuelson, Lars (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Litwin, A. (author)
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(creator_code:org_t)
- 2002
- 2002
- English.
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In: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 46:9, s. 1433-1440
- Related links:
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http://dx.doi.org/10...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://lup.lub.lu.s...
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Abstract
Subject headings
Close
- By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- nano-particles
- Schottky barrier height
- silicon carbide
- image force lowering
- electron-transport
- contacts
- devices
- image force
- silicon carbide
- nano-particles
- Schottky barrier height
- lowering
Publication and Content Type
- ref (subject category)
- art (subject category)
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