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Be-doped low-temper...
Be-doped low-temperature-grown GaAs material for optoelectronic switches
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Krotkus, A. (author)
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Bertulis, K. (author)
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Kaminska, M. (author)
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Korona, K. (author)
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Wolos, A. (author)
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Siegert, J. (author)
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- Marcinkevicius, Saulius (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Roux, J. F. (author)
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Coutaz, J. L. (author)
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(creator_code:org_t)
- Institution of Engineering and Technology (IET), 2002
- 2002
- English.
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In: IEE Proceedings - Optoelectronics. - : Institution of Engineering and Technology (IET). - 1350-2433 .- 1359-7078. ; 149:3, s. 111-115
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Structural, electrical and recombination properties of Be-doped low-temperature MBE grown (LTG) GaAs have been investigated by using a number of different experimental techniques. These properties were analysed with respect to the applications of LTG GaAs in ultrafast optoelectronic devices. It has been found that a moderate Be-doping improves the structural quality of the layers and does not affect their semi-insulating behaviour. Electron and hole capture cross-sections, critical parameters for the design of optoelectronic devices from LTG GaAs, equal to sigma(n) = 1.1 x 10(-13) and sigma(p) = 1.8 x 10(-15) cm(2) were also determined.
Keyword
- epitaxial gaas
- dynamics
Publication and Content Type
- ref (subject category)
- art (subject category)
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