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Critical concentration for the doping-induced metal-nonmetal transition in cubic and hexagonal GaN
- da Silva, A. F. (author)
- Persson, Clas (author)
- AIP Publishing, 2002
- 2002
- English.
- In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:5, s. 2550-2555
- Journal article (peer-reviewed)
Abstract
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- The critical concentration for the metal-nonmetal transition has been calculated for n-type and p-type GaN. Both cubic and hexagonal structures of GaN have been considered. Three different computational methods have been utilized: the first is the original Mott model, the second is an extended Mott-Hubbard model, and the third method is based on total energy of the metallic and the nonmetallic phases. All three methods show a similar value of the critical concentration, about 10(18) and 10(20) cm(-3) for n-type and p-type doped materials, respectively.
Keyword
- acceptor binding-energies
- optical-properties
- shallow donors
- n-type
- doped semiconductors
- dynamical properties
- dielectric function
- wurtzite gan
- aln
- si
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- ref (subject category)
- art (subject category)
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