A wafer-scale Ni-salicide contact technology on n-type 4H-SiC

Zetterling, Carl-Mikael, 1966- (author): KTH,Integrerade komponenter och kretsar

(creator_code:org_t)

2017-03-03
2017
English.
In: ECS Journal of Solid State Science and Technology. - : Electrochemical Society. - 2162-8769 .- 2162-8777. ; 6:4, s. P197-P200

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5 × 10−6 Ω · cm2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale which saves time and cost.

By the author/editor: Elahipanah, Hoss ...; Asadollahi, Ali; Ekström, Mattias; Salemi, Arash; Zetterling, Carl ...; Östling, Mikael

About the subject

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