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A wafer-scale Ni-sa...
A wafer-scale Ni-salicide contact technology on n-type 4H-SiC
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- Elahipanah, Hossein (author)
- KTH,Integrerade komponenter och kretsar
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- Asadollahi, Ali (author)
- KTH,Integrerade komponenter och kretsar
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- Ekström, Mattias (author)
- KTH,Elektronik
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- Salemi, Arash (author)
- KTH,Elektronik
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- Zetterling, Carl-Mikael, 1966- (author)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- 2017-03-03
- 2017
- English.
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In: ECS Journal of Solid State Science and Technology. - : Electrochemical Society. - 2162-8769 .- 2162-8777. ; 6:4, s. P197-P200
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5 × 10−6 Ω · cm2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale which saves time and cost.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Annan teknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Other Engineering and Technologies (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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