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Different strain re...
Different strain relaxation mechanisms in strained Si/Si1-xGex/Si heterostructures by high dose B+ and BF2+ doping
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Chen, C. C. (author)
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Lindgren, A. C. (author)
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- Zhang, Shi-Li (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Zhu, D. Z. (author)
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Vantomme, A. (author)
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(creator_code:org_t)
- 2002
- 2002
- English.
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In: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 198:02-jan, s. 57-63
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Strained Si/Si0.8Ge0.2/Si heterostructures are implanted at room temperature with 7.5 keV B+ and 33 keV BF2+ ions to a high dose of 2 x 10(15) ions/cm(2), respectively. The samples are subsequently subjected to three-step anneals (spacer anneal, oxidation anneal and rapid thermal anneal), which are used to simulate a real fabrication process of SiGe-based MOSFET devices. The damage induced by implantation and its recovery are characterized by 2 MeV He-4(+) RBS/ channeling spectrometry. A damage layer on the surface is induced by B+ implantation, but BF2+ ion implantation amorphizes the surface of Si/Si0.8Ge0.2/Si heterostructure. Channeling angular scans along the (110) axial direction demonstrate that the strain stored in the SiGe layer could be nearly completely retained for the B+ implantated and subsequently annealed sample. However, the strain in the BF2+ implanted/annealed SiGe layer has decreased drastically.
Keyword
- ion channeling
- B+ and BF2+ implantation
- strain
- SiGe/Si heterostructure
- heterojunction bipolar-transistors
- ion-implantation
- layer
Publication and Content Type
- ref (subject category)
- art (subject category)
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