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Na0.5K0.5NbO3 thin ...
Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications
- Article/chapterEnglish2002
Publisher, publication year, extent ...
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-22120
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-22120URI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20100525
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Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir20 vertical capacitor yielded remnant polarization of 12 muC/cm(2) and coercive field similar to20 kV/cm. Significant flat-band voltage V-FB shifts with buffer layer thickness in Au/NKN/SiO2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta2O5/Si structure exhibited wide memory window without significant V-FB deviations, low leakage currents, and rather long retention time at zero bias.
Subject headings and genre
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Na0.5K0.5NbO3 (NKN) thin film
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Au/NKN/Ta2O5/Si
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MFIS_diode
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ferroelectric non-volatile memory
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pulsed-laser deposition
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varactor
Added entries (persons, corporate bodies, meetings, titles ...)
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Park, S. H.
(author)
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Moon, B. M.
(author)
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Sundqvist, J.
(author)
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Harsta, A.
(author)
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Grishin, Alexander M.KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u179x9xt
(author)
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KTHMikroelektronik och informationsteknik, IMIT
(creator_code:org_t)
Related titles
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In:Integrated Ferroelectrics49, s. 21-301058-45871607-8489
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