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Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots
- Leon, R. (author)
-
- Marcinkevicius, Saulius (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
- Siegert, J. (author)
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- Cechavicius, B. (author)
- Magness, B. (author)
- Taylor, W. (author)
- Lobo, C. (author)
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- (creator_code:org_t)
- 2002
- 2002
- English.
- In: IEEE Transactions on Nuclear Science. - 0018-9499 .- 1558-1578. ; 49:6, s. 2844-2851
- Journal article (peer-reviewed)
Abstract
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- The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional (3-D) quantum confinement.. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAS/AlGaAS), QD surface density (4 x 10(8) to 3 x 10(10) cm(-2)), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.
Keyword
- carrier dynamics
- compound semiconductors
- displacement damage
- photoluminescence
- Stranski-Krastanow quantum dots
- enhanced radiation hardness
- light-emitting-diodes
- deep levels
- gaas
- damage
- lasers
- transformation
- dependence
- wells
- degradation
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- ref (subject category)
- art (subject category)
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