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- Baskar, K. (author)
Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE
- Article/chapterEnglish2003
Publisher, publication year, extent ...
- 2003
- printrdacarrier
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- LIBRIS-ID:oai:DiVA.org:kth-22183
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-22183URI
- https://doi.org/10.1016/S0022-0248(02)01936-XDOI
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- Language:English
- Summary in:English
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- QC 20100525
- GaInNAs/GaAs single quantum wells (QWs) have been grown by metalorganic vapour phase epitaxy (MOVPE). The surface morphology has been studied by atomic force microscopy (AFM). The density of pits observed on the surface of QW structures was found to depend on the growth temperature and dimethylhydrazine (DMHy) flow. Cross-sectional AFM image showed the presence of defects at the interface of GaInNAs/GaAs. The low temperature photoluminescence characteristics of the QWs as a function of growth temperature. DMHy flow and density of surface pits have been discussed. The origin of pit formation is addressed based on the pyrolysis products present during the growth of QWs. The results suggest that higher growth temperature maybe desirable to obtain good quality GaInNAs QWS.
Subject headings and genre
- atomic force rnicroscopy
- photoluminescence
- surface structure
- MOVPE
- III-V semiconductors
- photoluminescence
- temperature
Added entries (persons, corporate bodies, meetings, titles ...)
- Sundgren, P. (author)
- Douheret, O. (author)
- Landgren, Gunnar.KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u1u0w3c2 (author)
- KTHMikroelektronik och informationsteknik, IMIT (creator_code:org_t)
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- In:Journal of Crystal Growth248, s. 431-4360022-02481873-5002
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