Schottky-barrier behavior of metals on n- and p-type 6H-SiC

Aboelfotoh, M. O. (author)

Fröjdh, Christer, 1952- (author): Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)

Petersson, C. Sture (author): Mittuniversitetet,KTH,Mikroelektronik och informationsteknik, IMIT,Institutionen för informationsteknologi och medier (-2013)

(creator_code:org_t)

2003
2003
English.
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 67:7, s. 075312-

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; https://urn.kb.se/re...; show less...

Abstract Subject headings

The Schottky-barrier height of a number of metals (Ti, Ni, Cu, and Au) on n- and p-type Si-terminated 6H-SiC has been measured in the temperature range 150-500 K. It is found that the barrier height to n-type 6H-SiC does not exhibit a temperature dependence, while for p-type 6H-SiC the change in the barrier height with temperature follows very closely the change in the indirect energy gap in 6H-SiC. These results are inconsistent with models of Schottky-barrier formation based on the concept of a charge neutrality level. Furthermore, the present results cannot be reconciled with a defect pinning mechanism, contrary to the conclusions of earlier studies on III-V compound semiconductors. We suggest that chemical bonding at the metal-semiconductor interface plays an important role in determining the Schottky-barrier height.

TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

By the author/editor: Aboelfotoh, M. O ...; Fröjdh, Christer ...; Petersson, C. St ...

About the subject

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