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Effect of isotropic stress on dislocation bias factor in bcc iron : an atomistic study

Bakaev, A. (author)
Terentyev, D. (author)
Chang, Zhongwen (author)
KTH,Reaktorfysik
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Posselt, M. (author)
Olsson, Pär (author)
KTH,Reaktorfysik
Zhurkin, E. E. (author)
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 (creator_code:org_t)
2017-10-30
2018
English.
In: Philosophical Magazine. - : Taylor and Francis Ltd.. - 1478-6435 .- 1478-6443. ; 98:1, s. 54-74
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The effect of externally applied stress on the dislocation bias factor (BF) in bcc iron has been studied using a combination of atomistic static calculations and finite element integration. Three kinds of dislocations were considered, namely, a0/2〈1 1 1〉{1 1 0} screw, a0/2〈1 1 1〉{1 1 0} edge and a0〈1 0 0〉{0 0 1} edge dislocations. The computations reveal that the isotropic crystal expansion leads to an increasing or constant dislocation bias, depending on the Burgers vector and type of dislocation. On the other hand, compressive stress reduces the dislocation bias for all the dislocations studied. Variation of the dislocation BF depending on dislocation type and Burgers vector is discussed by analysing the modification of the interaction energy landscape and the capture efficiency values for the vacancy and self-interstitial atom. 

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Keyword

dislocation bias factor
external stress
Ferritic steels
molecular statics
Compressive stress
Dislocations (crystals)
Ferritic steel
Screw dislocations
Atomistic studies
Bias factor
Capture efficiency
Crystal expansion
Interaction energies
Self-interstitial atoms
Edge dislocations

Publication and Content Type

ref (subject category)
art (subject category)

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By the author/editor
Bakaev, A.
Terentyev, D.
Chang, Zhongwen
Posselt, M.
Olsson, Pär
Zhurkin, E. E.
About the subject
ENGINEERING AND TECHNOLOGY
ENGINEERING AND ...
and Materials Engine ...
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Philosophical Ma ...
By the university
Royal Institute of Technology

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