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Aluminum doping of ...
Aluminum doping of epitaxial silicon carbide
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Forsberg, U. (author)
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Danielsson, O. (author)
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Henry, A. (author)
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- Linnarsson, Margareta K. (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Janzen, E. (author)
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(creator_code:org_t)
- Elsevier BV, 2003
- 2003
- English.
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In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 253:04-jan, s. 340-350
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Intentional doping of aluminum in 4H and 6H SiC has been performed using a hot-wall CVD reactor. The dependence of aluminum incorporation on temperature, pressure, C/Si ratio, growth rate, and TMA flow has been investigated. The aluminum incorporation showed to be polarity dependent. The high aluminum incorporation on the Si-face is closely related to the carbon coverage on the SiC surface. Changes in process parameters changes the effective C/Si ratio close to the SiC surface. Increased growth rate and C/Si ratio increases the aluminum incorporation on the Si-face. Diffusion limited incorporation occurs at high growth rate. Reduced pressure increases the effective C/Si ratio, and at low growth rate, the aluminum incorporation increases initially, levels off at a critical pressure, and continues to decrease below the critical pressure. The aluminum incorporation showed to be constant in a temperature range of 50degreesC. The highest atomic concentration of aluminum observed in this study was 3 x 10(17) and 8 x 10(18) cm(-3) in Si and C-face, respectively.
Keyword
- doping
- growth models
- chemical vapor deposition processes
- hot wall epitaxy
- semiconducting silicon carbide
- chemical-vapor-deposition
- al
Publication and Content Type
- ref (subject category)
- art (subject category)
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