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Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si
- Monakhov, E. V. (author)
- Alfieri, G. (author)
- Avset, B. S. (author)
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- Svensson, B. G. (author)
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- (creator_code:org_t)
- 2003-09-19
- 2003
- English.
- In: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 15:39, s. S2771-S2777
- Journal article (peer-reviewed)
Abstract
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- Radiation-induced divacancy-related levels in high-purity oxygen-enriched n-type silicon have been studied with the use of deep level transient spectroscopy (DLTS) and Laplace-DLTS. It has been shown that heat treatment at 250degreesC results in a shift of the divacancy (V-2)-related peaks observed by 'standard' DLTS. Using Laplace-DLTS it is demonstrated that the shift is due to annealing of V-2 and formation of a new acceptor centre. The new centre has presumably two negative charge states: singly and doubly negative. The formation of the new centre holds a close one-to-one correlation with the annealing of V-2, indicating that the new centre is a result of divacancy interaction with an impurity or a defect. The close position of the electronic levels of the new centre to that of V-2 suggests a similar electronic and microscopic structure of the new centre to V-2, and a tentative identification is a divacancy-oxygen centre.
Keyword
- vacancy-oxygen complexes
- silicon
- defects
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- ref (subject category)
- art (subject category)
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- Monakhov, E. V.
- Alfieri, G.
- Avset, B. S.
- Hallén, Anders.
- Svensson, B. G.
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- Royal Institute of Technology
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